NUMERICAL-ANALYSIS OF A THIN MICROCRYSTALLINE-P LAYER IN P-I-N A-SI-HSOLAR-CELLS

We have used our numerical simulator to examine the function of a thin microcrystalline p(mu c-Si:H) layer in a p-i-n hydrogenated amorphous silicon (n-Si:H) based solar cell. In the analysis of a p(mu c-Si:H)- i-n structure, three parameter sets were chosen for the purpose of ver ifying the validity of the reported measured p(mu c-Si:H) material par ameters. The results revealed that the correct setting of the p(mu c-S i:H) work function is of prime importance. Analysis of a double window layer with an inserted p(a-SiC:H) layer and an accompanying i(a-SiC:H ) buffer layer in the p(mu c-Si:H)-i-n structure showed that the i(a-S iC:PI) buffer layer beneficially affects the J(SC) and fill factor and furthermore, the insertion of a few nanometers thick p(a-SiC:PI) laye r between the p(mu c-Si:H) layer and i(a-SiC:H) buffer layer additiona lly improves the solar cell performance. (C) 1998 American Institute o f Physics.