V. Swaminathan et al., 1.3 MU-M INGAASP INP CAPPED MESA BURIED HETEROSTRUCTURE LASER WITH ANUNDOPED CLADDING LAYER IN BASE EPITAXIAL-GROWTH/, Journal of applied physics, 83(8), 1998, pp. 4540-4541
A study of Zn diffusion behavior in capped mesa buried heterostructure
lasers reveals the Zn profile in the base epitaxial region of InGaAsP
/InP heterostructures to be dominated by diffusion during regrowth. Th
is diffusion behavior has enabled us to fabricate a laser without any
Zn doping in the p clad during base growth. The lasing characteristics
at 25 degrees C are comparable to those of normally Zn-doped structur
es. The Zn diffusion into the undoped cladding layer, and thus, the te
mperature performance of these lasers are dependent on the level of Zn
doping in third growth. (C) 1998 American Institute of Physics.