CHANGES IN THE ELECTRONIC-PROPERTIES OF SI NANOCRYSTALS AS A FUNCTIONOF PARTICLE-SIZE

X-ray absorption and photoemission spectra have been used to measure t he band edges of silicon nanocrystals with average diameters ranging f rom 1 to 5 nm. We compare the experimentally measured band edges to re cent electronic structure calculations and find that the experimentall y measured band gap is smaller than that predicted by theory.