The angular correlation of positron annihilation radiation (ACPAR) alo
ng different crystallographic directions in SixSn1-x and GexSn1-x is c
alculated. We observe that the electron-positron momentum density incr
eases rapidly with increasing Si and Ge content. The computational tec
hnique used here is based on the independent-particle model (IPM) coup
led with the use of the electron pseudowave and the virtual crystal ap
proximation (VCA) which incorporates compositional disorder as an effe
ctive potential. We also present the variation of the positron lifetim
e in these alloys.