A STUDY OF STRONG PHOTOLUMINESCENCE OF SIOX-H FILMS

We have examined photoluminescence (PL), IR absorption and Raman spect ra of a series of hydrogenated amorphous silicon oxide (a-SiOx:H, (0 < x < 2)) films fabricated by plasma enhanced chemical vapor deposition (PECVD). Two strong luminescence bands were observed at room temperat ure, one is a broad envelope comprising a main peak around 670 nm and a shoulder at 835 nm, and the other, peaked around 850 nm; is found on ly after being annealed up to 1170 degrees C in N-2 environment. In co njunction with IR and Raman spectra, the origins of the two luminescen t bands and their annealing behaviors are discussed on the basis of qu antum confinement effects.