DEFECT FORMATION IN ELECTRON-IRRADIATED SYNTHETIC DIAMOND ANNEALED INTHE TEMPERATURE-RANGE 820-1120 K

Authors
SHISHONOK EM SHIPILO VB POPELNUK GP AZARKO II MELNIKOV AA FILIPP AR
Citation
Em. Shishonok et al., DEFECT FORMATION IN ELECTRON-IRRADIATED SYNTHETIC DIAMOND ANNEALED INTHE TEMPERATURE-RANGE 820-1120 K, Materials letters, 34(3-6), 1998, pp. 143-147
Citations number
9
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
34
Issue
3-6
Year of publication
1998
Pages
143 - 147
Database
ISI
SICI code
0167-577X(1998)34:3-6<143:DFIESD>2.0.ZU;2-B
Abstract
The phenomenon of the extreme increase of the concentration of dispers ed paramagnetic nitrogen in electron-irradiated synthetic diamond spec imens annealed in the temperature range 820-1120 K was revealed. It is established that the order of the reaction responsible for the decrea se of paramagnetic defects on annealing at temperatures T-ann > 1020 K or times no more than one hour is equal to 2, with the activation ene rgy of the process being E-a = 1.07 eV. (C) 1998 Elsevier Science B.V.