LANTHANUM DOPED LEAD-ZIRCONATE-TITANATE STANNATE ANTIFERROELECTRIC THIN-FILMS FROM ACETIC ACID-BASED SOL-GEL METHOD

Citation
Bm. Xu et al., LANTHANUM DOPED LEAD-ZIRCONATE-TITANATE STANNATE ANTIFERROELECTRIC THIN-FILMS FROM ACETIC ACID-BASED SOL-GEL METHOD, Materials letters, 34(3-6), 1998, pp. 157-160
Citations number
13
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
34
Issue
3-6
Year of publication
1998
Pages
157 - 160
Database
ISI
SICI code
0167-577X(1998)34:3-6<157:LDLSAT>2.0.ZU;2-1
Abstract
Lanthanum doped lead zirconate titanate stannate antiferroelectric thi n films with 'square' hysteresis loops and zero remanent polarization were prepared, for the first time, from acetic acid-based sol-gel proc essing. The method has the advantages of simple procedure in solution preparation, less sensitivity to moisture and the potential to make th ick films. The thin films obtained have very distinctive phase transit ion field, and the saturated polarization value of 37 mu C/cm(2), whic h are suitable for high-energy-storage or decoupling capacitor applica tions in advanced multichip modules, as well as microactuation applica tions. (C) 1998 Elsevier Science B.V.