Lanthanum doped lead zirconate titanate stannate antiferroelectric thi
n films with 'square' hysteresis loops and zero remanent polarization
were prepared, for the first time, from acetic acid-based sol-gel proc
essing. The method has the advantages of simple procedure in solution
preparation, less sensitivity to moisture and the potential to make th
ick films. The thin films obtained have very distinctive phase transit
ion field, and the saturated polarization value of 37 mu C/cm(2), whic
h are suitable for high-energy-storage or decoupling capacitor applica
tions in advanced multichip modules, as well as microactuation applica
tions. (C) 1998 Elsevier Science B.V.