PHOTOVOLTAIC PERFORMANCE OF P-AGINSE2 N-CDS THIN-FILM HETEROJUNCTIONS/

Authors
RAMESH PP HUSSAIN OM UTHANNA S NAIDU BS REDDY PJ
Citation
Pp. Ramesh et al., PHOTOVOLTAIC PERFORMANCE OF P-AGINSE2 N-CDS THIN-FILM HETEROJUNCTIONS/, Materials letters, 34(3-6), 1998, pp. 217-221
Citations number
20
Categorie Soggetti
Material Science","Physics, Applied
Journal title
Materials letters → ACNP
ISSN journal
0167577X
Volume
34
Issue
3-6
Year of publication
1998
Pages
217 - 221
Database
ISI
SICI code
0167-577X(1998)34:3-6<217:PPOPNT>2.0.ZU;2-2
Abstract
Polycrystalline thin film p-AgInSe2/n-CdS heterojunctions were fabrica ted and current density-voltage, capacitance-voltage and spectral resp onse of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 500 mV, a short-circuit current density of 24 mA cm(-2) and an electrical con version efficiency of 6% have been obtained for a cell 1 cm(2) in area under a solar input of 100 mW cm(-2). (C) 1998 Elsevier Science B.V.