EFFECTS OF SUBSTRATE-TEMPERATURE ON THE GROWTH OF ORIENTED LINBO3 THIN-FILMS BY PULSED-LASER DEPOSITION

Citation
Zc. Wu et al., EFFECTS OF SUBSTRATE-TEMPERATURE ON THE GROWTH OF ORIENTED LINBO3 THIN-FILMS BY PULSED-LASER DEPOSITION, Materials letters, 34(3-6), 1998, pp. 332-335
Citations number
8
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
34
Issue
3-6
Year of publication
1998
Pages
332 - 335
Database
ISI
SICI code
0167-577X(1998)34:3-6<332:EOSOTG>2.0.ZU;2-9
Abstract
Oriented LiNbO3 thin films have been prepared by pulsed laser depositi on on fused silica. substrates under a proper low electric field. The as-grown films were characterized by means of X-ray diffraction theta- 2 theta scans, X-ray photo-electron spectrometry and atomic force micr oscopy. Significant effects of the substrate temperature and magnitude of the applied electric field on the orientation of the films are rev ealed, demonstrating the preferred electric field of similar to 7 V/cm and substrate temperature of 600 degrees C. Drastic influence of the substrate temperature on the stoichiometry of the thin films is also s hown. The as-prepared thin films show quite good surface quality. (C) 1998 Elsevier Science B.V.