PLASMA-ETCHING OF DIELECTRIC FILMS USING THE NON-GLOBAL-WARMING GAS CF3I

In this study, trifluoroiodomethane (CF3I), a non-global-warming gas, has been investigated as a substitute for typical PFCs currently used in wafer patterning and CVD chamber cleaning processes. Dielectric fil ms consisting of plasma enhanced chemically vapor deposited silicon di oxide and silicon nitride were comparatively etched in CF3I and C2F6/O -2 plasma environments. The etch rate of these films was ascertained a s a function of applied rf power, etchant gas flow rate, reaction cham ber pressure and CF3I:O-2 ratio. (C) 1998 Elsevier Science B.V.