SOLUTION SOL-GEL PROCESSING OF BA(MG1 3TA2/3)(1-X)SNXO3 [X = 0.0, 0.2] AS SUBSTRATES FOR HIGH T-C SUPERCONDUCTORS/

Citation
P. Ravindranathan et al., SOLUTION SOL-GEL PROCESSING OF BA(MG1 3TA2/3)(1-X)SNXO3 [X = 0.0, 0.2] AS SUBSTRATES FOR HIGH T-C SUPERCONDUCTORS/, Materials letters, 34(3-6), 1998, pp. 430-433
Citations number
9
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
34
Issue
3-6
Year of publication
1998
Pages
430 - 433
Database
ISI
SICI code
0167-577X(1998)34:3-6<430:SSPOB3>2.0.ZU;2-7
Abstract
A solution sol-gel method for preparing Ba(Mg1/3Ta2/3)(1-x)SnxO3 [x = 0.0, 0.2] powders was developed. Single phase Ba(Mg1/3Ta2/3)(1-x)SnxO3 [x = 0.0. 0.2] oxide powders formed at temperature as low as 600 degr ees C. The calcined powders sintered at 1500 degrees C for 24 h result ed in greater than or equal to 95% of the theoretical density. The die lectric constant and tangent loss were determined to be 24 and 10(-4) at 10 kHz respectively. (C) 1998 Elsevier Science B.V.