FIELD RELATED PASSIVATION OF INTERFACE-TRAP AFTER HIGH-FIELD ELECTRONINJECTION

Authors
WU YJ TAN CH XU MZ WANG YY
Citation
Yj. Wu et al., FIELD RELATED PASSIVATION OF INTERFACE-TRAP AFTER HIGH-FIELD ELECTRONINJECTION, Electronics Letters, 34(7), 1998, pp. 656-657
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
7
Year of publication
1998
Pages
656 - 657
Database
ISI
SICI code
0013-5194(1998)34:7<656:FRPOIA>2.0.ZU;2-T
Abstract
A new experimental result for field related passivation of interface t raps after high-field electron injection is presented, showing that pa ssivation can be enhanced by positive low-field bias. Decay of the pos itive oxide charge is also obtained simultaneously, indicating that th ere is no conversion of trapped holes into interface traps.