BANDGAP TUNING OF VISIBLE LASER MATERIAL

Authors
HAMILTON CJ KOWALSKI OP MCILVANEY K BRYCE A MARSH JH BUTTON CC
Citation
Cj. Hamilton et al., BANDGAP TUNING OF VISIBLE LASER MATERIAL, Electronics Letters, 34(7), 1998, pp. 665-666
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
7
Year of publication
1998
Pages
665 - 666
Database
ISI
SICI code
0013-5194(1998)34:7<665:BTOVLM>2.0.ZU;2-3
Abstract
A reliable impurity free technique for quantum well intermixing is rep orted in the GaInP-AlGaInP material system, which has enabled bandgap shifts up to 91meV to be achieved in standard laser structures. Oxide stripe lasers fabricated from the intermixed material had an emission wavelength of 646nm compared to a wavelength of 676nm for as-grown mat erial.