LOW-THRESHOLD QUANTUM-DOT INJECTION-LASER EMITTING AT 1.9-MU-M

Authors
USTINOV VM ZHUKOV AE EGOROV AY KOVSH AR ZAITSEV SV GORDEEV NY KOPCHATOV VI LEDENTSOV HN TSATSULNIKOV AF VOLOVIK BV KOPEV PS ALFEROV ZI RUVIMOV SS LILIENTALWEBER Z BIMBERG D
Citation
Vm. Ustinov et al., LOW-THRESHOLD QUANTUM-DOT INJECTION-LASER EMITTING AT 1.9-MU-M, Electronics Letters, 34(7), 1998, pp. 670-672
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
7
Year of publication
1998
Pages
670 - 672
Database
ISI
SICI code
0013-5194(1998)34:7<670:LQIEA1>2.0.ZU;2-O
Abstract
Self-organised InAs quantum dots inserted in an (In, Ga)As matrix latt ice matched to an InP substrate are used as an active region in an inj ection laser. Low threshold (11.4A/cm(2)) lasing at 1.894 mu m (77K) v ia the states of the quantum dots is obtained. A material gain of the order of 10(4)cm(-1) is estimated.