MULTI-STACKED QUANTUM-DOT RESONANT-CAVITY PHOTODETECTOR OPERATING AT 1.06-MU-M

Authors
BAKLENOV O NIE H ANSELM KA CAMPBELL JC STREETMAN BG
Citation
O. Baklenov et al., MULTI-STACKED QUANTUM-DOT RESONANT-CAVITY PHOTODETECTOR OPERATING AT 1.06-MU-M, Electronics Letters, 34(7), 1998, pp. 694-695
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
7
Year of publication
1998
Pages
694 - 695
Database
ISI
SICI code
0013-5194(1998)34:7<694:MQRPOA>2.0.ZU;2-4
Abstract
A resonant-cavity ph photodiode with two quantum dot absorbing regions is described. Each absorbing region consists of a stack of five self- assembled. quantum-dot layers, that are Formed by the deposition of si x monolayers of In0.5Ga0.5As, with GaAs spacer layers. To optimise the responsivity, the quantum dot stacks are placed at the antinodes of t he cavity. The peak efficiency is 65% at 1.06 mu m with a spectral ban dwidth of 1.3 nm.