ASSESSMENT OF OFF-STATE NEGATIVE GATE VOLTAGE REQUIREMENTS FOR IGBTS

Authors
MCNEILL N SHENG K WILLIAMS BW FINNEY SJ
Citation
N. Mcneill et al., ASSESSMENT OF OFF-STATE NEGATIVE GATE VOLTAGE REQUIREMENTS FOR IGBTS, IEEE transactions on power electronics, 13(3), 1998, pp. 436-440
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE transactions on power electronics → ACNP
ISSN journal
08858993
Volume
13
Issue
3
Year of publication
1998
Pages
436 - 440
Database
ISI
SICI code
0885-8993(1998)13:3<436:AOONGV>2.0.ZU;2-Q
Abstract
This paper addresses the need for off-state negative gate bias with in sulated gate bipolar transistor (IGBT) devices that experience a dv/dt when in the off state. Factors considered include off-state gate bias voltage, gate impedance, reapplied dv/dt, and temperature. Theoretica l calculation and experimental results for a high-voltage high-current IGBT supports the assessment of these factors.