H. Gnaser, SPUTTERING OF CS-CARRYING DIATOMIC CATIONS FROM SURFACES BY KEV CS+ IRRADIATION, International journal of mass spectrometry and ion processes, 174(1-3), 1998, pp. 119-127
Citations number
38
Categorie Soggetti
Spectroscopy,"Physics, Atomic, Molecular & Chemical
The sputter ejection of diatomic molecular ions carrying a Cs atom fro
m cesium loaded surfaces is investigated. Experiments indicate that th
ese MCs+ ions (where M stands for any sample element) are formed throu
gh the association, in the emission event, of a neutral M atom and a C
s+ ion. The (preceding) incorporation of Cs+ primary ions into the nea
r-surface region of the specimen is a necessary prerequisite; it is st
udied via computer simulations. The resulting build-up of a Cs surface
concentration effects a lowering of the local work function. This is
monitored experimentally from a shifting of the secondary ion energy d
istributions with an accuracy of similar to 0.1 eV. The gradual reduct
ion of the work function causes positive ion yields to decrease. A clo
se correlation between Cs(+)f and MCs+ yields is found during both the
transient build-up of Cs upon irradiation of pristine surfaces and th
e sputter depth profiling of Cs-implanted samples, supporting the comb
inative formation mechanism. The observed scaling of the MCs+ formatio
n probability with the polarizability of M indicates that a dipole ind
uced binding is relevant for these molecular species. (C) 1998 Elsevie
r Science B.V.