FORMATION OF 10 NM SI STRUCTURES USING SIZE-SELECTED METAL-CLUSTERS

The formation of 10 nm scale Si pillars using deposited metal clusters of various kinds (Au, Ag etc) as nuclei for the creation of etch mask s has been investigated via SF6 microwave plasma etching at about -130 degrees C. Experiments using size-selected Ag clusters indicate that the cluster size affects the efficiency of pillar formation but has li ttle effect on the diameter of the fabricated pillars. The average dia meter of pillars fabricated with Au clusters is 9 nm, while that with Ag clusters is 19 nm. This is attributed to the difference in chemical reactivity of the clusters with S or F, the components of the etching gas, which results in a different ability to form etch masks by conde nsation of SxFy species.