Wh. Jung et E. Iguchi, ELECTRICAL-CONDUCTION BEHAVIOR IN K2NIF4-TYPE CA2MNO3.98 BELOW ROOM-TEMPERATURE, Journal of physics. D, Applied physics, 31(7), 1998, pp. 794-799
Electrical transport in polycrystalline ceramics of K2NiF4-type Ca2MnO
3.98 has been investigated as a function of temperature using complex-
plane impedance analyses, dielectric properties, DC conductivities by
the four-probe method, thermoelectric power and magnetic susceptibilit
ies. The bulk conductivities were obtained using the complex-plane imp
edance analyses. The magnetic properties indicate that antiferromagnet
ically ordered magnetic moments are canted and there is a weak ferroma
gnetic contribution below the Neel temperature of 113 K, The thermoele
ctric power changes from positive Values to negative ones at around 20
0 K with increasing temperature. Above about 200 K, the dielectric rel
axation peak due to a hopping process involving small polarons manifes
ts itself. The temperature dependencies of the dielectric: relaxation
process and the bulk conductivities suggest that the charge carriers r
esponsible for the conduction are strongly localized. This is directly
supported by the fact that the activation energy for the bulk conduct
ion is nearly equal to that for the dielectric relaxation, The experim
ental results above about 200 K have been interpreted in terms of a ho
pping process involving small polarons. At lower temperatures, either
multiphonon jumping processes of small polarons are frozen out or char
ge transport between impurity states takes place.