THERMODYNAMIC ASPECTS OF THE GA1-XINXN GROWTH BY MOCVD

On the basis of a thorough thermodynamic analysis in the Ga-In-N-C-H s ystem, feasible technological conditions for deposition of the solid G a1-xInxN mixed nitride are discussed. The analysis was performed in th e temperature range of 600-900 degrees C at pressures of 1 and 0.1 atm for various input gaseous phase compositions. Liquid Ga1-yIny alloy, solid Ga1-xInxN mixed nitride and solid graphite were considered in eq uilibrium with the gaseous phase. It was shown that the Ga1-xInxN comp osition varies greatly with input gas phase composition. temperature, total pressure and character of the carrier gas. Possible formation of the liquid phase as well as solid graphite was predicted for some dep osition conditions. The calculated results are in qualitative agreemen t with published experimental observations. (C) 1998 Elsevier Science B.V.