CHARACTERIZATION OF CUINTE2 THIN-FILMS PREPARED BY PULSED-LASER DEPOSITION

In this paper initial results are presented for the growth and charact erization of CuInTe2 thin films prepared by pulsed loser deposition (P LD) using Nd:YAG laser and XeCl excimer laser. The films were analyzed using X-ray diffraction XRD), energy dispersive X-ray analysis (EDAX) and Rutherford back scattering (RBS) measurements. The composition of the target material was largely maintained in the films. This suggest s that PLD could be used as a technique for the fabrication of ternary semiconductor films. Electrical measurements indicated p-type conduct ivity with surface resistivity values in the range of 10(-1)-10(-2) Om ega cm. The films had a high optical absorption of about 104 cm(-1) an d a band gap of 0.96 eV. (C) 1998 Elsevier Science B.V.