SINGLE-SOURCE DEPOSITION OF ME-C-H FILMS USING METAL-ORGANIC PRECURSORS

The deposition mechanisms of Fe-C:H films from a plasma-activated chem ical vapour deposition from metal-organic precursors (PAMOCVD) were in vestigated by feeding a ferrocene plasma with additional hydrogen. Whi le the deposition rate decreases continously from 36 mu m h(-1) for lo w hydrogen flow down to 8 mu m h(-1) for 50 seem hydrogen flow (1 seem ferrocene), the iron content in the film increases in a steplike beha viour from 9 at% to 15 at% at a hydrogen flow between 20 and 30 seem. The decrease of the deposition rate is due to an etching of the film b y atomic hydrogen while the film composition is influenced by a change in the plasma gas chemistry. This change was investigated by quadrupo le mass spectroscopy (QMS). We detected a steplike change of iron-cont aining and iron-free fragments leading to a reduction of iron-free rad icals and therefore to an increase in the iron content of the film. (C ) 1997 Elsevier Science S.A.