IMPROVEMENT OF MECHANICAL-PROPERTIES OF A-C-H BY SILICON ADDITION

The structure of a hard a-C:Si:H deposited by RF reactive sputtering f rom a graphite target in an argon-silane atmosphere is analysed. It is shown that Si and C atoms are intermixed and form a rigid network. Th e details of the deposition process are discussed and the crucial role of argon evidenced. Argon atoms dehydrogenate silane to form SiH grou ps, which have a high sticking coefficient and a low surface mobility. These groups become centres of nucleation. The energy of argon ions i mpinging on the growing surface is important in determining a good int ermixing of carbon and silicon and the removal of voids. (C) 1997 Else vier Science S.A.