TOTAL-DOSE HARDNESS INTEGRATED-CIRCUIT FABRICATED WITH SILICON-ON-DIAMOND STRUCTURED WAFER

Authors
GU CZ JIN ZS MENG Q LU XY ZOU GT LU JX SU XD XU ZD YAO D
Citation
Cz. Gu et al., TOTAL-DOSE HARDNESS INTEGRATED-CIRCUIT FABRICATED WITH SILICON-ON-DIAMOND STRUCTURED WAFER, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 673-675
Citations number
7
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
5-7
Year of publication
1997
Pages
673 - 675
Database
ISI
SICI code
0925-9635(1997)6:5-7<673:THIFWS>2.0.ZU;2-M
Abstract
In this paper, we fabricated an integrated circuit with silicon-on-dia mond (SOD) structured wafer. The total-dose radiation characteristics of this SOD circuit was studied using a cobalt-60 radiation source. Co mparison with the same circuit using bulk silicon wafer, showed that t otal-dose radiation introduces a small decrease in threshold voltage a nd drain current to the SOD circuit. (C) 1997 Elsevier Science S.A.