OPTIMIZING CONTROL OF MICROWAVE PLASMA BIAS ENHANCED NUCLEATION FOR HETEROEPITAXIAL CHEMICAL-VAPOR-DEPOSITION DIAMOND

Authors
MARSHALL RD WHITFIELD MD TRACEY S THOMPSON DJ FOORD JS JACKMAN RB
Citation
Rd. Marshall et al., OPTIMIZING CONTROL OF MICROWAVE PLASMA BIAS ENHANCED NUCLEATION FOR HETEROEPITAXIAL CHEMICAL-VAPOR-DEPOSITION DIAMOND, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 676-680
Citations number
12
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
5-7
Year of publication
1997
Pages
676 - 680
Database
ISI
SICI code
0925-9635(1997)6:5-7<676:OCOMPB>2.0.ZU;2-X
Abstract
Bias enhanced nucleation (BEN) during microwave plasma enhanced chemic al vapour deposition of diamond on Si(100) has been studied using atom ic force microscopy (AFM), scanning electron microscopy, Raman scatter ing and optical reflectivity measurements. The critical nature of the BEN treatment period in the formation of nuclei that subsequently lead to high quality oriented films has been demonstrated. An effective te chnique is described for determining when optimal BEN treatment has be en carried out on Si substrates which should be independent of the rea ctor in use. (C) 1997 Elsevier Science S.A.