Y. Chakk et al., KINETICS OF THE INITIAL-STAGES OF CVD DIAMOND GROWTH ON NON-DIAMOND SUBSTRATES - SURFACE CATALYTIC EFFECTS AND HOMOEPITAXY, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 681-686
Recently, we have reported that the density of chemical vapour deposit
ion (CVD) diamond particles obtained on non-diamond substrates abraded
with a diamond slurry can be enhanced by a few orders of magnitude by
abrasion with a mixed metal/diamond slurry. In this work, we present
growth kinetics studies of isolated diamond crystallites (prior to coa
lescence into a continuous film), which are formed at the initial stag
es of deposition on metal/diamond and diamond-pretreated silicon. The
metals used were Ti, Fe and Cu. It has been found that the temperature
dependence of the diamond growth rates on differently pretreated subs
trates can be described by an Arrhenius plot. From these plots, it has
been concluded that at the initial stages of deposition the activatio
n energy for CVD diamond formation, as observed for diamond-abraded su
bstrates, can be substantially decreased as a result of substrate surf
ace pretreatment with a mixed metal/diamond slurry. However, after coa
lescence of the crystallites into a continuous film, the activation en
ergies for metal/diamond and diamond-pretreated substrates were found
to be similar. Based on micro-Raman measurements it has been found tha
t at the initial stages of deposition, the quality of diamond that was
grown on the metal/diamond abraded substrates is higher than that dep
osited on the diamond-abraded ones. In contrast, after a long depositi
on time, the quality of diamond grown on the differently pretreated su
bstrates was found to be similar. It is suggested that the observed ef
fects are associated with the metal's catalytic activity towards the h
ydrogenation of unsaturated hydrocarbons, namely enhancing the concent
ration of sp(3)-bonded hydrocarbon fragments. At the initial stage of
deposition, before a stable substrate is formed, this enhancement lead
s to an increase in the diamond growth rate, lowering of the activatio
n energy for its homoepitaxial growth on diamond residues left by pret
reatment, and improvement of its quality. (C) 1997 Elsevier Science S.
A.