OPTICAL AND ELECTRICAL INVESTIGATION OF BORON-DOPED HOMOEPITAXIAL DIAMOND

Authors
OGASAWARA A INUSHIMA T SHIRAISHI T OHYA S KARASAWA S SHIOMI H
Citation
A. Ogasawara et al., OPTICAL AND ELECTRICAL INVESTIGATION OF BORON-DOPED HOMOEPITAXIAL DIAMOND, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 835-838
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
5-7
Year of publication
1997
Pages
835 - 838
Database
ISI
SICI code
0925-9635(1997)6:5-7<835:OAEIOB>2.0.ZU;2-#
Abstract
Conduction mechanism of boron-doped homoepitaxial diamond was investig ated by means of Hall measurements and infrared-visible spectroscopy. Diamond films with various boron concentrations were grown by the micr owave plasma-assisted CVD method. It is shown that owing to the strong interaction between the hole and the optical phonon, the conduction m echanism changes from a valence-band conduction to an impurity-band co nduction in a sample having a carrier concentration of more than 10(18 ) cm(-3) at room temperatures. (C) 1997 Elsevier Science S.A.