Electron emission characteristics have been investigated for polycryst
alline diamond films with negative electron affinity. Phosphorus-doped
diamond films are deposited on Si wafers and Cu plates by hot-filamen
t chemical vapor deposition. An Al/diamond contact is formed on the re
ar side of the diamond him after removing Si substrates. A significant
reduction in the applied electric field for the electron emission is
achieved by forming Cu/diamond and Al/diamond contacts in comparison t
o that of diamond on Si. It is revealed that the electron emission cha
racteristics are dominated by electrons injected into the diamond at t
he metal/diamond contact. (C) 1997 Elsevier Science S.A.