ELECTRON-EMISSION CHARACTERISTICS OF METAL DIAMOND FIELD EMITTERS/

Citation
T. Sugino et al., ELECTRON-EMISSION CHARACTERISTICS OF METAL DIAMOND FIELD EMITTERS/, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 889-892
Citations number
13
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
6
Issue
5-7
Year of publication
1997
Pages
889 - 892
Database
ISI
SICI code
0925-9635(1997)6:5-7<889:ECOMDF>2.0.ZU;2-Z
Abstract
Electron emission characteristics have been investigated for polycryst alline diamond films with negative electron affinity. Phosphorus-doped diamond films are deposited on Si wafers and Cu plates by hot-filamen t chemical vapor deposition. An Al/diamond contact is formed on the re ar side of the diamond him after removing Si substrates. A significant reduction in the applied electric field for the electron emission is achieved by forming Cu/diamond and Al/diamond contacts in comparison t o that of diamond on Si. It is revealed that the electron emission cha racteristics are dominated by electrons injected into the diamond at t he metal/diamond contact. (C) 1997 Elsevier Science S.A.