SURFACE ELECTRONIC-STRUCTURE OF INAS(100)1X2 1X4-PB/

Authors
LELAY G ARISTOV VY LAYET JM CARRERE M BELKHOU R KIM HJ JOHNSON RL
Citation
G. Lelay et al., SURFACE ELECTRONIC-STRUCTURE OF INAS(100)1X2 1X4-PB/, Journal of electron spectroscopy and related phenomena, 88, 1998, pp. 613-617
Citations number
12
Categorie Soggetti
Spectroscopy
Journal title
Journal of electron spectroscopy and related phenomena → ACNP
ISSN journal
03682048
Volume
88
Year of publication
1998
Pages
613 - 617
Database
ISI
SICI code
0368-2048(1998)88:<613:SEOI1>2.0.ZU;2-H
Abstract
Upon deposition and annealing of one Pb monolayer on the clean, In-ter minated InAs(100)-4x2/c(8x2) surface we have obtained a sharp 1x2/1x4 superstructure. We have investigated its electronic structure by angle -resolved photoemission using synchrotron radiation. From valence-band spectra measured at normal emission as well as along the <(Gamma)over bar>-(J) over bar and <(Gamma)over bar>-<(J')over bar> directions of the surface Brillouin zone, two surface induced states were identified and mapped out. (C) 1998 Elsevier Science B.V.