SURFACE-ANALYSIS OF SI W MULTILAYER USING TOTAL-REFLECTION X-RAY PHOTOELECTRON-SPECTROSCOPY/

X-ray photoelectron spectra of W/Si 100 bilayers on an Si wafer are me asured using a soft X-ray synchrotron beam line at the Photon Factory. The grazing incident X-rays are used to excite photoelectrons. The Si Is and W 3d(5/2) photoelectron intensities are measured as a function of the glancing angle of the incident X-ray beam, The measured angle dependence of photoelectron peak intensity is reproduced by a simulati on of surface layer structure. (C) 1998 Elsevier Science B.V.