USXES INVESTIGATIONS OF THIN-FILM TISI2

Thin films of TiSi2 (C54) silicide obtained through the interactions o f Ti/Si(111) and Ti/poly-Si/Si(111) structures under thermal anneal (T A) and infrared anneal (IRA) in a vacuum were investigated by ultrasof t X-ray emission spectroscopy and X-ray diffraction. Silicon L-2,L-3-s pectra of thin film silicides differ from those of bulk by the increas ed intensity in the high energy range adjoined to the Fermi level and general smoothing. This effect is mostly expressed for rapid IRA of th in film structures with the films of poly-Si and can be explained by i ncreased deficiency of the crystal structure of silicides. (C) 1998 El sevier Science B.V.