BEHAVIOR OF AL-AL2O3-AL SINGLE-ELECTRON TRANSISTORS FROM 85 MK TO 5 K

Using e-beam lithography and conventional double-angle evaporation, we have fabricated Al-Al2O3-Al single-electron transistors and studied t heir behavior from 85 mK to about 5 K. The total island capacitance C- Sigma of the devices ranges from 120 to 200 aF, with typical estimated junction overlaps of about 30 nmX30 nm. At 4.2 K, our devices display well-behaved periodic I-V-g characteristics with the maximum charge-t ransfer function partial derivative I/partial derivative Q(0) ranging from 4 to 130 pA/e. The electrical characteristics of these devices ag ree well with the predictions of the Orthodox Theory, with current mod ulation being observed up to a temperature T similar or equal to e(2)/ (2C(Sigma)k(B)). Below 1 K small deviations occur, which are partly du e to island self-heating effects. (C) 1998 American Institute of Physi cs.