NATIVE POINT-DEFECTS IN SI WITH A COSI2 FILM - SINGLE-CRYSTAL VERSUS POLYCRYSTALLINE

Citation
Sb. Herner et al., NATIVE POINT-DEFECTS IN SI WITH A COSI2 FILM - SINGLE-CRYSTAL VERSUS POLYCRYSTALLINE, Applied physics letters, 72(18), 1998, pp. 2289-2291
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
72
Issue
18
Year of publication
1998
Pages
2289 - 2291
Database
ISI
SICI code
0003-6951(1998)72:18<2289:NPISWA>2.0.ZU;2-6
Abstract
We have determined the native point defects concentrations in silicon with single and polycrystalline CoSi2 films by annealing Sb and B dopi ng superlattices at 850 degrees C/60 min in N-2. The polycrystalline f ilm results in enhanced Sb diffusion in Si, indicating a vacancy super saturation (C-V/C-V)similar to 2.4+/-0.8, while the single crystal fi lm maintains a vacancy concentration near equilibrium. Boron diffusion is retarded by the same amount by both films, indicating an interstit ial undersaturation (C-I/C-Isimilar to 0.3+/-0.1). This directly impl ies that CoSi2 grain boundaries are the cause of the higher vacancy su persaturation that is well known to occur during standard Co silicidat ion.