LATTICE-RELAXATION IN ZNS EPILAYERS GROWN ON GAP

The lattice relaxation of ZnS epilayers grown on GaP substrates by hot -wall epitaxy was investigated. The dependence of lattice constants an d full widths at half-maximum of the double crystal rocking curves upo n layer thickness was observed. The critical thickness for ZnS/GaP is found to be about 350 Angstrom. The epilayers thinner than the critica l thickness have almost the same lattice constants. The strain due to the lattice mismatch is almost relaxed in epilayers thicker than 2.5 m u m. (C) 1998 American Institute of Physics.