SURFACE CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL

Authors
LIN KC HOLLAND OW FELDMAN LC WEITERING HH
Citation
Kc. Lin et al., SURFACE CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 72(18), 1998, pp. 2313-2315
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
72
Issue
18
Year of publication
1998
Pages
2313 - 2315
Database
ISI
SICI code
0003-6951(1998)72:18<2313:SCOSM>2.0.ZU;2-Z
Abstract
The surface of ultrathin silicon on insulator (SOI) material has been characterized with surface science analysis techniques including atomi c-resolution scanning tunneling microscopy. It is shown that the (100) SOI surface can be fabricated with a comparable degree of structural perfection as the (100) surface of bulk Si. Fermi level pinning by ''t ype C'' dimer defects results in a fully depleted and thus effectively insulating Si film. (C) 1998 American Institute of Physics.