FERROELECTRIC MEMORY CIRCUIT TECHNOLOGY AND THE APPLICATION TO CONTACTLESS IC CARD

Authors
ASARI K HIRANO H HONDA T SUMI T TAKEO M MORIWAKI N NAKANE G NAKAKUMA T CHAYA S MUKUNOKI T JUDAI Y AZUMA M SHIMADA Y OTSUKI T
Citation
K. Asari et al., FERROELECTRIC MEMORY CIRCUIT TECHNOLOGY AND THE APPLICATION TO CONTACTLESS IC CARD, IEICE transactions on electronics, E81C(4), 1998, pp. 488-496
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E81C
Issue
4
Year of publication
1998
Pages
488 - 496
Database
ISI
SICI code
0916-8524(1998)E81C:4<488:FMCTAT>2.0.ZU;2-I
Abstract
Ferroelectric non-volatile memory (FeRAM) has been inspiring interests since bismuth layer perovskite material family was found to provide ' 'Fatigue Free'' endurance, superior retention and imprint characterist ics. In this paper, we will provide new circuits technology for FeRAM developed to implement high speed operation, low voltage operation and low power consumption. Performance of LSI embedded with FeRAM for con tactless IC card is also provided to demonstrate the feasibility of th e circuit technology.