IMPROVED RESISTANCE AGAINST THE REDUCTIVE AMBIENT ANNEALING OF FERROELECTRIC PB(ZR,TI)O-3 THIN-FILM CAPACITORS WITH IRO2 TOP ELECTRODE

Authors
FUJISAKI Y KUSHIDAABDELGHAFAR K MIKI H SHIMAMOTO Y
Citation
Y. Fujisaki et al., IMPROVED RESISTANCE AGAINST THE REDUCTIVE AMBIENT ANNEALING OF FERROELECTRIC PB(ZR,TI)O-3 THIN-FILM CAPACITORS WITH IRO2 TOP ELECTRODE, IEICE transactions on electronics, E81C(4), 1998, pp. 518-522
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E81C
Issue
4
Year of publication
1998
Pages
518 - 522
Database
ISI
SICI code
0916-8524(1998)E81C:4<518:IRATRA>2.0.ZU;2-P
Abstract
Degradation of ferroelectricity in PZT (Pb(Zr-0.52, Ti-0.48)O-3) thin- film capacitors caused by heat treatment in a reductive ambience is in vestigated. We have found that the degradation of ferroelectricity dep ends upon the metal used for the top electrode of the PZT capacitor. T he increased degradation in the case of a PZT capacitor with Pt electr odes can be explained by a catalytic reaction on the Pt surface. With the use of an IrO2 non-catalytic top electrode, we have made the ferro electricity of an IrO2/PZT/Pt capacitor retained even after the H-2 an nealing at 400 degrees C, or above.