ASYMMETRY AND QUASI-LINEAR BACKGROUND OF DIFFERENTIAL CONDUCTANCE CHARACTERISTICS OF HIGH-T-C-SUPERCONDUCTOR METAL TUNNEL-JUNCTIONS/

Citation
M. Grajcar et al., ASYMMETRY AND QUASI-LINEAR BACKGROUND OF DIFFERENTIAL CONDUCTANCE CHARACTERISTICS OF HIGH-T-C-SUPERCONDUCTOR METAL TUNNEL-JUNCTIONS/, Physical review. B, Condensed matter, 55(17), 1997, pp. 11738-11744
Citations number
31
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
17
Year of publication
1997
Pages
11738 - 11744
Database
ISI
SICI code
0163-1829(1997)55:17<11738:AAQBOD>2.0.ZU;2-J
Abstract
The inelastic component of differential conductivity of a tunnel junct ion is studied theoretically in a wide voltage range. A quadratic depe ndence (similar to\V\V) of differential conductivity on bias voltage V was found in addition to the linear one. The sign of the quadratic te rm depends on both the sign of bias voltage and the ratio of Fermi ene rgy to the parameter of the tunneling barrier strength. This leads to asymmetry of differential characteristics even if the barrier is recta ngular. Good agreement was obtained between our theoretical results an d experimental data observed on high-T-c-superconductor/metal as well as on Ni-NiO-Pb tunnel junctions.