PARAMAGNETIC STRUCTURE OF THE SOLITON OF THE 30-DEGREES PARTIAL DISLOCATION IN SILICON

Citation
G. Csanyi et al., PARAMAGNETIC STRUCTURE OF THE SOLITON OF THE 30-DEGREES PARTIAL DISLOCATION IN SILICON, Physical review letters, 80(18), 1998, pp. 3984-3987
Citations number
21
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
18
Year of publication
1998
Pages
3984 - 3987
Database
ISI
SICI code
0031-9007(1998)80:18<3984:PSOTSO>2.0.ZU;2-S
Abstract
Based on ab initio calculations, we propose a new structure for the fu ndamental excitation of the reconstructed 30 degrees partial dislocati on in silicon. This soliton has a rare structure involving a fivefold coordinated atom near the dislocation con. The unique electronic struc ture of this defect is consistent with the electron spin resonance sig nature of the hitherto enigmatic thermally stable R center of plastica lly deformed silicon. This identification suggests the possibility of an experimental determination of the density of solitons, a key defect in understanding the plastic flow of the material.