REFLECTIVITY AND OPTICAL BRIGHTNESS OF LASER-INDUCED SHOCKS IN SILICON

Citation
T. Lower et al., REFLECTIVITY AND OPTICAL BRIGHTNESS OF LASER-INDUCED SHOCKS IN SILICON, Physical review letters, 80(18), 1998, pp. 4000-4003
Citations number
11
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
80
Issue
18
Year of publication
1998
Pages
4000 - 4003
Database
ISI
SICI code
0031-9007(1998)80:18<4000:RAOBOL>2.0.ZU;2-X
Abstract
We report the first simultaneous measurement of the reflectivity and o ptical emission of a strong (48 Mbar) shock front emerging at a free s urface of a solid. Planar shock waves were driven by thermal x rays fr om a laser-heated cavity. The inferred model-independent brightness te mperature of the shock front in silicon turns out to be significantly below the expected Hugoniot temperature. We find that our data cannot be explained within the two-temperature model which assumes instantane ous metallization of silicon in the density jump.