The interpretation of electronic transport in polycrystalline diamond
has proven difficult as a result of the disorder arising from physical
and chemical inhomogeneities. We describe experimental methods, based
on electron beam lithography, for studying transport in single crysta
llites grown by CVD on Si substrates. The electrical contacting proces
s utilizes the flexibility of the scanning electron microscope to writ
e metallic contacts to individual crystallites with lateral dimensions
of a few mu m. A detailed analysis of the current distribution in the
crystals allows us to extract the electronic conductivity from arbitr
arily shaped, faceted crystals. (C) 1997 Elsevier Science S.A.