HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER

Authors
EBERT W VESCAN A GLUCHE P BORST T KOHN E
Citation
W. Ebert et al., HIGH-VOLTAGE SCHOTTKY DIODE ON EPITAXIAL DIAMOND LAYER, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 329-332
Citations number
5
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
2-4
Year of publication
1997
Pages
329 - 332
Database
ISI
SICI code
0925-9635(1997)6:2-4<329:HSDOED>2.0.ZU;2-N
Abstract
Homoepitaxial diamond Schottky diodes with leakage current less than 1 0(-7) A cm(-2) up to the breakdown voltage of 90 V are discussed. Unde r forward voltage an exponential current increase over six orders of m agnitude and an ideality factor of n<1.2 is observed. At elevated temp erature, thermally activated reverse leakage currents are present as c ommonly observed, however breakdown is not degraded. The experiments a llow to discuss design rules for high-voltage diamond Schottky diodes. (C) 1997 Elsevier Science S.A.