HIGH-TEMPERATURE POLYCRYSTALLINE DIAMOND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Authors
PANG LYS CHAN SSM JOHNSTON C CHALKER PR JACKMAN RB
Citation
Lys. Pang et al., HIGH-TEMPERATURE POLYCRYSTALLINE DIAMOND METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 333-338
Citations number
21
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
6
Issue
2-4
Year of publication
1997
Pages
333 - 338
Database
ISI
SICI code
0925-9635(1997)6:2-4<333:HPDM>2.0.ZU;2-K
Abstract
High temperature p-type depletion-mode metal-insulator-semiconductor f ield-effect-transistors with intrinsic diamond gates have been fabrica ted from thin film polycrystalline diamond. They have been successfull y operated at 300 degrees C with low leakage currents, and exhibit com plete channel current pinch-off and modulation. A transconductance of 174 mu S mm(-1) has been measured, the highest reported value to date for this type of device. (C) 1997 Elsevier Science S.A.