THE CHARACTERIZATION OF SINGLE STRUCTURE DIAMOND HEATER AND TEMPERATURE SENSOR

Heal generation and temperature sensing, essential for most heater app lications, were achieved by using a single diamond resistor. Chemical vapor-deposited p-type diamond resistors were fabricated on polycrysta lline diamond substrates and oxidized Si wafers using diamond film tec hnology compatible with integrated circuit processing. The resistivity -temperature relationship of diamond thermistors was characterized Ln the temperature range of 300-1000 K. The maximum heating temperature a nd power density of 950 It and 93 W cm(-2), respectively, were achieve d for healing application. The average difference between the temperat ures determined by self-sensing of diamond thin film heaters and the t emperatures measured by thermocouples was in the range of 1.05-3.6%. D ue to its high thermal conductivity, the substrate temperature was iso thermal, as indicated by two-dimensional optical thermometry. (C) 1997 Elsevier Science S.A.