PREPARATION, TRANSMISSION ELECTRON-MICROSCOPY, AND MICROANALYTICAL INVESTIGATIONS OF METAL-III-V SEMICONDUCTOR INTERFACES (REPRINTED FROM MATERIALS CHARACTERIZATION, VOL 37, PG 143-151, 1996)

Authors
KLEIN A URBAN I RESSEL P NEBAUER E MERKEL U OSTERLE W
Citation
A. Klein et al., PREPARATION, TRANSMISSION ELECTRON-MICROSCOPY, AND MICROANALYTICAL INVESTIGATIONS OF METAL-III-V SEMICONDUCTOR INTERFACES (REPRINTED FROM MATERIALS CHARACTERIZATION, VOL 37, PG 143-151, 1996), Materials characterization, 39(2-5), 1997, pp. 697-705
Citations number
9
Journal title
Materials characterization → ACNP
ISSN journal
10445803
Volume
39
Issue
2-5
Year of publication
1997
Pages
697 - 705
Database
ISI
SICI code
1044-5803(1997)39:2-5<697:PTEAMI>2.0.ZU;2-3
Abstract
Ohmic metallizations on semiconductors such as In0.53Ga0.47As and GaAs have been analyzed by cross-sectional transmission electron microscop y. To obtain a lattice image of multilayer structures in the high-reso lution mode, a cross-sectional specimen preparation procedure was deve loped. The phase formation after thermal treatment of the ohmic contac ts has been studied by applying different microanalytical techniques. The results have been utilized for improving the metallurgical stabili ty and the electrical properties of the contacts. (C) Elsevier Science Inc., 1996.