The anisotropic electrical resistivity of HgBr2 intercalated Bi-2212 s
ingle crystal and the electrical resistivity and thermoelectric power(
TEP) of AgI, I-2 and HgI2 intercalated polycrystalline Bi-2223 are mea
sured. In the normal state (T > T-c), the semiconductor-like behavior
of rho c(T) of the pristine Bi2Sr2CaCu2O7, becomes metallic upon the H
gBr2 intercalation, while rho(ab)(T) remains metallic. The resistivity
data of the HgBr2 intercalated samples, show anomalies at T = 250 K r
eminiscent of a phase transition. The results indicate that the charge
transfer from HgBr2 to the CuO2 plane is important, which supports th
e picture that the doping induced holes in the copper oxide sheets are
responsible for the high temperature superconductivity. Meanwhile, th
e intercalated polycrystalline Bi-2223 shows semiconductor-like resist
ivity with two T-c about 25 K lower than that of the pristine Bi-2223
(T-c similar to 100 K). The magnitude of TEP increases upon intercalat
ion, which indicates the charge transfer mechanism for the Bi-2223 may
be different from that of the Bi-2212.