DEUTERON IRRADIATION CREEP OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE FIBERS

Authors
SCHOLZ R
Citation
R. Scholz, DEUTERON IRRADIATION CREEP OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE FIBERS, Journal of nuclear materials, 254(1), 1998, pp. 74-77
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
Journal title
Journal of nuclear materials → ACNP
ISSN journal
00223115
Volume
254
Issue
1
Year of publication
1998
Pages
74 - 77
Database
ISI
SICI code
0022-3115(1998)254:1<74:DICOCV>2.0.ZU;2-0
Abstract
Irradiation creep tests were conducted on Textron SCS-6 silicon carbid e (SiC) fibers during irradiation with 14 MeV deuterons at 450 and 600 degrees C. The fibers are produced by a CVD procedure: their microstr ucture may therefore be representative for the matrix of a SiC composi te. There is a significant radiation induced increase in creep deforma tion. Both quantities, irradiation creep strain and creep rate, are hi gher at 450 degrees C than at 600 degrees C for doses < 0.07 dpa. (C) 1998 Elsevier Science B.V.