(CD,HG)S PSEUDO-BINARY THIN-FILMS - GROWTH AND PROPERTIES

A good deal of information regarding the synthesis, electrical transpo rt and optical properties of chemically grown HgxCd1-x thin film struc tures have been reported. The growth of these films depends on various preparative parameters and deposition conditions such as temperature, pH, time, concentration, etc and the reaction kinetics suggest that t he films grow in two different phases: one, initial quasi-linear and o ther saturation phase. The de electrical conductivity is found to be i ncreased with the increase in composition parameter, x, up to 0.05 and decreased thereafter for higher x values. The samples exhibit both gr ain boundary scattering limited and a variable range hopping conductio n mechanism. Both carrier concentration (n) and mobility (mu) are sens itive functions of temperature and are influenced significantly by the Hg-mole content incorporated. The action spectra showed displacement in the absorption edge towards lower energy side by the addition of Hg -mole content. The energy gap decreased from 2.42 eV down to 1.76 eV a s x is increased from 0 to 0.05. The optical transitions an of the ban d to band direct type.