INTERFACIAL MODIFICATION INDUCED BY EQUILIBRIUM SEGREGATION IN GE(S) BICRYSTAL

Authors
CHARAI A FARES L ALFONSO C ROUSSEL L ROUVIERE JL
Citation
A. Charai et al., INTERFACIAL MODIFICATION INDUCED BY EQUILIBRIUM SEGREGATION IN GE(S) BICRYSTAL, Surface review and letters, 5(1), 1998, pp. 43-47
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
1
Year of publication
1998
Pages
43 - 47
Database
ISI
SICI code
0218-625X(1998)5:1<43:IMIBES>2.0.ZU;2-5
Abstract
An original experimental procedure is set up in order to relate unambi guously the equilibrium impurity segregation in a grain boundary to th e structural modifications. This is clearly established in the case of the Ge(S) Sigma = 25 grain boundary. Using HREM, EDS and EELS, we sho w that the sulfur segregation occurs on the dislocation cores of the g rain boundary and that it stabilizes the lowest energy structures of t he initial one.