ATOMIC-STRUCTURE OF A MONOLAYER OF GE ON SI(001)(2 X-1)

Authors
JENKINS SJ SRIVASTAVA GP
Citation
Sj. Jenkins et Gp. Srivastava, ATOMIC-STRUCTURE OF A MONOLAYER OF GE ON SI(001)(2 X-1), Surface review and letters, 5(1), 1998, pp. 97-100
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Physics, Atomic, Molecular & Chemical","Material Science
Journal title
Surface review and letters → ACNP
ISSN journal
0218625X
Volume
5
Issue
1
Year of publication
1998
Pages
97 - 100
Database
ISI
SICI code
0218-625X(1998)5:1<97:AOAMOG>2.0.ZU;2-Q
Abstract
We present results of first-principles pseudopotential calculations fo r an ordered monolayer growth of Ge on Si(001)(2 x 1). Our results str ongly support the asymmetric Ge-Ge dimer model. We also provide a deta iled discussion on the nature of the bonding within the overlayer and between the overlayer and the substrate.